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Experimental Analysis of the Schottky Barrier Height of Metal Contacts in Black Phosphorus Field-Effect Transistors

Journal of Physics D Applied Physics(2018)

Natl Taiwan Univ | Purdue Univ | Taiwan Semicond Mfg Co

Cited 15|Views13
Abstract
Compared to graphene and MoS2, studies on metal contacts to black phosphorus (BP) transistors are still immature. In this work, we present the experimental analysis of titanium contacts on BP based upon the theory of thermionic emssion. The Schottky barrier height (SBH) is extracted by thermionic emission methods to analyze the properties of Ti-BP contact. To examine the results, the band gap of BP is extracted followed by theoretical band alignment by Schottky-Mott rule. However, an underestimated SBH is found due to the hysteresis in electrical results. Hence, a modified SBH extraction for contact resistance that avoids the effects of hysteresis is proposed and demonstrated, showing a more accurate SBH that agrees well with theoretical value and results of transmission electron microscopy and energy-dispersive x-ray spectroscopy.
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black phosphorus,contact resistance,Schottky barrier height,MOSFET,metal contact
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要点】:本文通过实验分析钛金属接触黑磷场效应晶体管中的肖特基势垒高度,并提出了一种改进的测量方法以减少电学滞后带来的影响,创新点在于改进了肖特基势垒高度的提取方法,使其结果更符合理论预期。

方法】:利用热离子发射理论,通过电学测量提取了Ti-BP接触的肖特基势垒高度,并结合Schottky-Mott规则进行能带对齐分析。

实验】:通过实验研究了钛金属接触黑磷的场效应晶体管,使用热离子发射方法测量了肖特基势垒高度,并利用透射电子显微镜和能量色散X射线光谱技术验证结果,实验数据集未在文中明确提及。