Hall Effect Mobility for SiC MOSFETs with Increasing Dose of Nitrogen Implantation into Channel Region

The Hall effect mobility (mu(Hall)) of the Si-face 4H-SiC metal-oxide-semiconductor field effect transistor (MOSFET) with a nitrogen (N)-implanted channel region was investigated by increasing the N dose. The mu(Hall) in the channel region was systematically examined regarding channel structures, that is, the surface and buried channels. It was experimentally demonstrated that increasing the N dose results in an improvement in mu(Hall) in the channel region due to the formation of the buried channel. However, further increase in N dose was found to decrease the mu(Hall) in the channel region, owing to the decrease in the electron mobility in the N-implanted bulk region. (c) 2018 The Japan Society of Applied Physics.