Performance Analysis and Enhancement of Negative Capacitance Logic Devices Based on Internally Resistive Ferroelectrics

Chia-Sheng Hsu
Chia-Sheng Hsu

IEEE Electron Device Letters, pp. 765-768, 2018.

Cited by: 0|Bibtex|Views3|DOI:https://doi.org/10.1109/LED.2018.2820118
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Abstract:

In this letter, we present a comprehensive performance analysis of ferroelectric (FE)-based logic gates and repeaters. In addition, we highlight the key aspects of negative capacitance FET (NCFET) characteristics, including the proper circuit initialization, the negative capacitance (NC) effect on leakage currents, and the impacts of the ...More

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