10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current

Normally off p-gallium nitride (GaN) gate high-electron-mobility transistors (HEMTs) on silicon substrate were fabricated with hydrogen plasma treatment technology, which features a high-resistivity cap layer (HRCL) at the access region. With hydrogen plasma treatment at the access region, the normally off operation was obtained with a threshold voltage of +2.5 V based on the linear extrapolation ...