Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration

Xiangdong Li,Marleen Van Hove,Ming Zhao,Karen Geens,Weiming Guo,Shuzhen You,Steve Stoffels,Vesa-Pekka Lempinen,Jaakko Sormunen,Guido Groeseneken,Stefaan Decoutere

IEEE Electron Device Letters（2018）

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摘要

The backgating effect on trench-isolated enhancement-mode p-GaN devices fabricated on 200-mm GaN-on-SOI was investigated. We show that to minimize the backgating effect in the monolithically integrated half-bridge, the sources of both the low side and high side need to be connected to their respective fully isolated Si(111) device layers to keep the substrates and the sources at equipotential.

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关键词

Substrates,HEMTs,MODFETs,Stress,Logic gates,Silicon,Aluminum gallium nitride

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