The effect of nitrogen implantation on resistive switching of tetrahedral amorphous carbon films
Diamond and Related Materials(2018)
摘要
We report the effect of nitrogen implantation on the resistance switching of tetrahedral amorphous carbon (ta-C) films. Both unimplanted and implanted films show resistive switching, with a characteristic threshold voltage required to switch the films from the high-resistance to the low-resistance state. The switching voltages for the unimplanted films are between 7 and 10 V for ta-C films of thickness 15 to 40 nm. These are significantly reduced upon implantation by up to 60% when using an implantation dose ~3 × 1015 cm−2. We attribute this to increased sp2 bonding and clustering in the implanted films. This demonstrates the importance of sp2 clustering for resistive-switching in sp3-rich ta-C films.
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