Technology Scaling Trend of Soft Error Rate in Flip-Flops in $1\times$ nm Bulk FinFET Technology
IEEE Transactions on Nuclear Science(2018)
摘要
This paper presents the soft error rate (SER) in flip-flops of 10-nm FinFET technology, and discusses the scaling trend of SER from 14- to 10-nm FinFET technologies. Alpha and neutron irradiation test results show huge SER improvement in 10-nm FinFET technology. In a 10-nm FinFET, the alpha-induced SER decreases by 13.4×, and the neutroninduced SER decreases by 3.1×, compared to the 14-nm FinFET t...
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关键词
FinFETs,Logic gates,Radiation effects,Analytical models,Neutrons,Simulation,Solid modeling
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