Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate

I. V. Shtrom,N. G. Filosofov,V. F. Agekian,M. B. Smirnov,A. Yu. Serov,R. R. Reznik,K. E. Kudryavtsev,G. E. Cirlin

Semiconductors（2018）

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摘要

The aim of this work is to demonstrate the fundamental possibility of Si-doped GaN nanowires growth on the buffer layer of silicon carbide on silicon substrate and to investigate the optical characteristics of this structures.

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