Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs

This paper presents an extensive investigation of the impact of the resistivity of the silicon substrate on the vertical leakage and charge trapping in 200 V GaN-on-Si enhancement-mode high-electron mobility transistors. Three wafers having different substrate resistivities were submitted to combined DC characterization, step-stress experiments, and electroluminescence (EL) analysis. The results d...