Improvement of cell reliability by floating gate implantation on 1Xnm NAND flash memory
Solid-state Electronics, pp. 39-43, 2018.
摘要：
Abstract Continuous scaling down NAND flash memory toward below 1Xnm node generation will result in serious floating gate (FG) poly depletion and significantly impact the cell reliability performance. In this study, the FG implantation before inter-poly-dielectric deposition was proposed. We have successfully explored the methods to min...更多
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