Improvement of cell reliability by floating gate implantation on 1Xnm NAND flash memory

Solid-state Electronics, pp. 39-43, 2018.

被引用0|引用|浏览20|DOI:https://doi.org/10.1016/j.sse.2018.05.006
其它链接academic.microsoft.com

摘要

Abstract Continuous scaling down NAND flash memory toward below 1Xnm node generation will result in serious floating gate (FG) poly depletion and significantly impact the cell reliability performance. In this study, the FG implantation before inter-poly-dielectric deposition was proposed. We have successfully explored the methods to min...更多

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