Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky Contacts

The metal-semiconductor contact resistivity has started to play a critical role for the overall device performance as Si is reaching 10-nm size ranges. The International Technology Roadmap for Semiconductors (ITRS) target predicts a requirement of 10-9 Ω·cm2 by 2023 which has been a challenging target to achieve. This paper explores the impact of doping concentration, Schottky barrier height, stra...