The role of hydrogen in carbon incorporation and surface roughness of MOCVD-grown thin boron nitride

Journal of Crystal Growth(2018)

引用 22|浏览38
暂无评分
摘要
•The self-terminating growth mode was performed in the presence of hydrogen and argon.•H2 atmosphere leads to reduction of C contamination by four orders of magnitude than Ar.•Growth under flow of hydrogen leads to smooth uniform surface of the BN layers.
更多
查看译文
关键词
A3. Metalorganic chemical vapor deposition,A3. Hot wall epitaxy,B1. Boron nitride epitaxy A1.SIMS characterization,A1. Surface morphology
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要