Asymmetric etching profile control during high aspect ratio Plasma etch

Dependency of asymmetric etched profiles on open-ratio and pattern-size within the wafer was studied in a magnetic Very High Frequency (VHF) Plasma etching system for high aspect-ratio multiple alternating layers of silicon oxide/polysilicon (OP) etching. The etched physical features are sensitive to the overall open ratio on the wafer; t...More