Asymmetric etching profile control during high aspect ratio Plasma etch

Zusing Yang
Zusing Yang
Li-Ian Wu
Li-Ian Wu
Hayato Watanabe
Hayato Watanabe
Yinhwa Cheng
Yinhwa Cheng
Takao Arase
Takao Arase

2018 29TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC), pp. 211.0-215.0, 2018.

Cited by: 0|Bibtex|Views18|DOI:https://doi.org/10.1109/asmc.2018.8373146
Other Links: academic.microsoft.com

Abstract:

Dependency of asymmetric etched profiles on open-ratio and pattern-size within the wafer was studied in a magnetic Very High Frequency (VHF) Plasma etching system for high aspect-ratio multiple alternating layers of silicon oxide/polysilicon (OP) etching. The etched physical features are sensitive to the overall open ratio on the wafer; t...More

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