Radiation hardness of silicon-on-insulator pixel devices
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment(2019)
摘要
Silicon-on-Insulator (SOI) CMOS is an attractive technology because of pixel sensor applications for its inherent advantages such as superior isolation of each FET by the surrounding insulator. We have been developing SOI pixel devices since 2005 using the FD-SOI technology and noticed that the insulator layers impose significant sensitivity to the total ionization dose (TID) effect. Research activities in the last ten years to improve radiation hardness are reviewed, such as introduction of buried wells and double SOI wafers.
更多查看译文
关键词
Radiation hardness,SOI pixel,TID,Double SOI
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要