Study of Ti/TiN bump defect formation mechanism and elimination by etch process optimization

2018 29TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC), pp. 66.0-69.0, 2018.

Cited by: 0|Bibtex|Views18|DOI:https://doi.org/10.1109/asmc.2018.8373147
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Abstract:

Subtle Ti/TiN bump defects are observed after thermal annealing in the development step of a back-end-of-line (BEOL) via metallization. It disturbs the endpoint detection of a sequential tungsten (W) chemical-mechanical planarization (CMP) process and results in W residue on the surface of the wafer. SIMS analysis conducted before Ti/TiN ...More

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