Series Resistance Reduction With Linearity Assessment for Vertically Stacked Junctionless Accumulation Mode Nanowire FET

Vertically stacked junctionless accumulation mode (JLAM) nanowire field effect transistors (NWFETs) outperform inversion-mode (IM) NWFETs below 10-nm technology nodes, but the vertical stacking of nanowires (NWs) has a constraint of position dependent drain current. This paper encompasses: 1) extensive investigation of the impact of series resistance on IM, JL mode, and JLAM NWFET architectures; 2...