Rram/Cmos-Hybrid Architecture Of Annealing Processor For Fully Connected Ising Model
2018 IEEE 10TH INTERNATIONAL MEMORY WORKSHOP (IMW)(2018)
摘要
This paper proposes a new architecture of the RRAM-based annealing processor to solve combinatorial problems using an Ising model. By utilizing the similarity between RRAM crossbar circuits and the !sing model in terms of dot-product operation, fully connected Ising-model is realized on the proposed RRAM annealing processor. Through numerical experiments, it is demonstrated that the proposed annealing processor can solve a fully connected 800-node max-cut problem with 147 times smaller power consumption compared to the existing CMOS-based annealing processor.
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关键词
RRAM, Ising model, annealing, combinatorial optimization problem
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