DISC-FETs: Dual Independent Stacked Channel Field-Effect Transistors
IEEE Electron Device Letters(2018)
摘要
We experimentally demonstrate a 3D field-effect transistor (FET) architecture leveraging emerging nanomaterials: Dual Independent Stacked Channel FET (DISC-FET). DISC-FET is comprised of two FET channels vertically integrated on separate circuit layers separated by a shared gate. This gate modulates the conductance of both FET channels simultaneously, although the stacked channels are independent,...
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关键词
CNTFETs,Logic gates,Three-dimensional displays,Voltage measurement,MOS devices,Metals
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