Te doping of GaAs and GaInP using diisopropyl telluride (DIPTe) for tunnel junction applications

Gwenaëlle Hamon, Nicolas Paillet,José Alvarez,Alexandre Larrue,J. Decobert

Journal of Crystal Growth（2018）

引用 5|浏览5

暂无评分

摘要

•Tellurium doping of GaAs by MOVPE using DiIsopropyl Telluride precursor.•High n-type doping levels, above 2.7 × 1019 cm−3, in both GaAs and GaInP materials.•N on P and P on N tunnel junctions suitable for multijunction solar cells.•Transparent tunnel junctions with peak tunneling current above 1500 A/cm2.

查看译文

关键词

A2. Metalorganic vapor phase epitaxy,B1. Semiconducting gallium arsenide,A1. Doping,B3. Multijunction solar cells

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要