Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD

•Simultaneous growth of 2 µm on native GaN substrates from three vendors.•Morphology differences in all cases match substrates.•Similar Si and O incorporation in epi regardless of substrate levels.•All samples have SBDs that withstand over 200 V (>1 MV/cm) without field management.•Uniformity of devices varies with substrate.•Higher Schottky barrier height occurs with rougher films.