Total-Ionizing-Dose Effects on Al/SiO 2 Bimorph Electrothermal Microscanners

Wenjun Liao,En Xia Zhang,Michael L. Alles,Andrew L. Sternberg,Charles N. Arutt,Dingkang Wang,Simeng E. Zhao,Pan Wang,Michael W. McCurdy,Huikai Xie,Daniel M. Fleetwood,Robert A. Reed,Ronald D. Schrimpf

IEEE Transactions on Nuclear Science（2018）

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摘要

Total-ionizing-dose effects on electrothermal micro- scanners are investigated using 10-keV X-rays and 14.3-MeV oxygen ions. The corresponding changes in mechanical displacement are measured using an optical microscope. Applied dc voltage and/or radiation-induced charging lead to changes in the vertical position and resistance of the structures. Radiation-induced changes in the vertical position a...

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关键词

Resistance,Actuators,Temperature measurement,Stress,Micromechanical devices,Resistors,X-rays

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