Transient Performance Analysis and Optimization of Crossbar Memory Arrays Using NbO 2 -Based Threshold Switching Selectors

IEEE Transactions on Electron Devices, pp. 3214-3220, 2018.

Cited by: 0|Bibtex|Views5|DOI:https://doi.org/10.1109/TED.2018.2848844
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Abstract:

Performance of the crossbar memory array highly depends on the selector characteristics. In this paper, rigorous transient analyses are performed for a large-size crossbar memory array using novel NbO2-based selectors with a threshold switching behavior. To enable accurate and efficient array-level simulation, an electrostatic discharge-b...More

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