Structural evolution of thermal annealed Si(0 0 1) surface layers fabricated by plasma immersion He+ implantation
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms(2018)
摘要
•Si wafers were treated with plasma immersion He+ implantation.•A multilayer structure with amorphous and damaged crystalline layers was formed.•The multilayer structure is stable to heating up to 1073 K.•Silicon nanocrystallites were revealed at the amorphous/crystalline interface.•Top-most amorphous SiOx and dense Si sublayers form a 15-nm protective cap.
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关键词
Silicon,Plasma immersion ion implantation,Helium-filled bubbles,Thermal annealing,X-ray reflectivity,Transmission electron microscopy
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