Effects of Rapid Thermal Annealing on Ar Inductively Coupled Plasma-Treated n-Type 4H-SiC Schottky and Ohmic Contacts

The effects of Ar inductively coupled plasma (ICP) treatment followed by a 600 °C-1000 °C rapid thermal annealing (RTA) on the n-type 4H-silicon carbide (SiC) Schottky-barrier diodes and n+-implanted ohmic contacts were investigated. The ICP treatment created a 3-nm-thick, sp2-C-rich, and amorphous layer at the SiC surface. The RTA repaired the bombardment-induced damages before metal deposition t...