The Sub-Micron Gan Hemt Device On 200mm Si(111) Wafer With Low Wafer Bow

Chieh-Chih Huang,Zhihong Liu,Weichuan Xing,Geok Ing Ng,Eugene A. Fitzgerald,S. J. Chua

2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018)（2018）

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摘要

GaN-on-Silicon growth by MOCVD is wildly discussed in the context of stress and strain management. The low bow AlGaN/GaN structure grew on 200mm Si(111) wafer was demonstrated in this study. After using the sapphire pits on the normal flat susceptor, the wafer bow and residual stress decrease to 21.27um and 0.28GPa tensile stress. The GaN quality and the Rs in HEMT also got huge improvement. The sub-micron devices also show the comparable results in DC and small signal characteristics.

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关键词

GaN quality,sub-micron GaN HEMT device,200mm Si(111) wafer,low wafer bow,strain management,low bow AlGaN/GaN structure,residual stress,tensile stress,signal characteristics,GaN-on-silicon growth,MOCVD,stress management,sapphire,normal flat susceptor,wafer bow stress,size 200.0 mm,Si,AlGaN-GaN

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