Design of High Performance XOR and XNOR Logic Gates without MOS Devices

2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)（2018）

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摘要

A design of high performance and area-efficient XOR and XNOR logic gates based on memristors is proposed, which consuming only 3 memristor cells and 3 clock cycles, 4 memristor cells and 4 clock cycles, respectively. The input of the gates is applied by voltage, and the output is presented as resistance value of the output cell. The proposed gates are MOS-less, and can be integrated into the 3D crossbar memristor array.

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关键词

memristor,XOR gate,XNOR gate

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