Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage

AlGaN/GaN Schottky barrier diodes (SBDs) combined with a dual anode metal (ohmic and Schottky contacts) and a p-GaN layer were studied for improving the reverse breakdown voltage (VBR) and reducing the turn-on voltage (VON). Structures with various distances of p-GaN layer (LG) were investigated using the current-voltage (I–V), reverse recovery time, and voltage stress characteristics. The SBDs fabricated with LG = 3 µm realized a lower RON of 4.26 mΩ-cm2 and lower VON of 0.10 V compared with the SBDs fabricated with LG = 5 and 8 µm as well as the standard device. Moreover, the VBR of the SBDs with LG = 3, 5, and 8 µm was − 606, − 679, and − 713 V, respectively. The results indicated that the SBDs combined with a dual anode metal and a p-GaN layer have significantly improved VBR than does of standard device. The reverse recovery time and reverse recovery charge of the SBD combined with a dual anode metal and a p-GaN layer design decreased due to the low noise and traps from the p-n junction.