X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors
IEEE Electron Device Letters(2018)
摘要
We report on the power and linearity performance of metal organic chemical vapor deposition grown AlGaN channel polarization-graded field-effect transistor (PolFET). The fabricated transistors with 3-D electron channels showed nearly flat transconductanceprofiles. Maximum fT and fmax of 23 and 65 GHz were measured for 0.7-μm gate-length transistors, corresponding to an fT-LG product of 16.2 GHz·μm...
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关键词
Linearity,Logic gates,HEMTs,MODFETs,Aluminum gallium nitride,Wide band gap semiconductors,Dispersion
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