Segregation of Al1.5CrFeNi high entropy alloys induced by vacancy-type defects

The radiation-induced segregation (RIS) of high entropy alloys (HEAs) have gained significant interest, however, the RIS mechanisms are not fully elucidated, mostly due to the inability to resolve the complexity of the effects of vacancies and interstitials on the alloying elements of HEAs. In this work, we investigated the effects of single vacancy-type defects on the segregation of Al1.5CrFeNi films. The results show that vacancy-type defects can induce significant segregation on the Al1.5CrFeNi alloys; vacancy-induced segregation evolution of HEAs depend on the atomic size of the alloy elements, in which oversized atoms diffusing faster while undersized atoms diffusing slower.