Defect evolution in ultralow energy, high dose helium implants of silicon performed at elevated temperatures

Journal of Applied Physics, pp. 1657082018.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.1063/1.5046096
Other Links: academic.microsoft.com

Abstract:

There is a growing interest in using high dose helium implants to alter point defect populations in silicon. Previous reports have shown that the interaction between helium and vacancies leads to the formation of cavities for medium energy (e.g., 20–100 keV) implants. However, the role of certain factors, such as the proximity of the surf...More

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