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Gate-induced interlayer asymmetry in ABA-stacked trilayer graphene

Physical Review B, no. 12 (2009)

被引用142|浏览4
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We calculate the electronic band structure of ABA-stacked trilayer graphene in the presence of external gates, using a self-consistent Hartree approximation to take account of screening. In the absence of a gate potential, there are separate pairs of linear and parabolic bands at low energy. A gate field perpendicular to the layers breaks...更多

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