Dynamic Switching Characteristics of 1 A Forward Current $\boldsymbol{\beta}$ -Ga₂O₃ Rectifiers

An inductive load test circuit was used to measure the switching performance of fieldplated edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, $7.85 \times 10.3 {\mathrm {cm}}^{2}$ area) and an absolute forward current of 1 A on 8 m thick epitaxial $\beta$ -Ga ₂ O ₃ drift layers. The recovery characteristics for these vertical geometry $\beta$ -Ga ₂ O ₃ Schottky rectifiers switching from forward current of 1 A to reverse off-state voltage of −300 V showed a recovery time (trr) of 64 ns. There was no significant temperature dependence of trr up to 150 °C.