Through-Silicon Vias: Drivers, Performance, and Innovations
IEEE Transactions on Components, Packaging and Manufacturing Technology(2016)
摘要
To address the abating performance improvements from device scaling, innovative 2.5-D and 3-D integrated circuits with vertical interconnects called through-silicon vias (TSVs) have been widely explored. This paper reviews TSVs with focus on the following: 1) key drivers for TSV-based integration; 2) TSV fabrication techniques; 3) TSV electrical and thermomechanical performance fundamentals and ch...
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关键词
Through-silicon vias,Silicon,Capacitance,Fabrication,Substrates,Dielectrics,Copper
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