A Si-Doped High-Performance WOx Resistance Memory Using a Novel Field-Enhanced Structure
international memory workshop, pp. 1-4, 2016.
We developed a simple structure that can enhance the local electric field thus reduce the forming and SET/RESET operation voltage for WOx ReRAM. Si-doped W film is used to further increase the initial resistance and improve the reliability properties. TCAD simulation shows that the field enhanced structure provides an equivalent electrica...More
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