A Si-Doped High-Performance WOx Resistance Memory Using a Novel Field-Enhanced Structure

international memory workshop, pp. 1-4, 2016.

Cited by: 0|Bibtex|Views19|DOI:https://doi.org/10.1109/IMW.2016.7493564
Other Links: academic.microsoft.com

Abstract:

We developed a simple structure that can enhance the local electric field thus reduce the forming and SET/RESET operation voltage for WOx ReRAM. Si-doped W film is used to further increase the initial resistance and improve the reliability properties. TCAD simulation shows that the field enhanced structure provides an equivalent electrica...More

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