Large Near-Infrared Lateral Photovoltaic Effect of ITO/Si Structure Observed at Low Temperature

In this paper, the power- and wavelength-dependent lateral photovoltaic effect (LPE) in an indium tin oxide/Si structure is first studied at different temperatures ranging from 292 to 80 K. It was found that the position sensitivity increased gradually until it became saturated with increasing laser power at a constant temperature, and the saturated position sensitivity increased nearly linearly f...