Electrophoretic deposition of CdZnS-ZnS QDs on InGaN/GaN MQW pillar structure

In this study, CdZnS-ZnS quantum dots (QDs) films were fabricated on InGaN/GaN multi quantum well (MQW) pillar structure by electrophoretic deposition demonstrated for the first time. The as synthesized QDs have particle size 5-8 nm and emission peak at 425 nm. The QDs are loaded both on the top as well as on the side wall of the InGaN/GaN MQW pillar structure. It showed a uniform coating having gradually increased in photoluminescence emission peak with increasing deposition times. (C) 2016 Elsevier Ltd. All rights reserved.