Local variation in Bi crystal sites of epitaxial GaAsBi studied by photoelectron spectroscopy and first-principles calculations

P. Laukkanen,M. P. J. Punkkinen, A. Lahti,J. Puustinen,M. Tuominen,J. Hilska,Jaakko Mäkelä,J. Dahl,M. Yasir,M. Kuzmin,Jacek Osiecki,Karina Schulte,Mircea Guina,K. Kokko

Applied Surface Science（2017）

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摘要

•XPS is used to study bulk-like properties of GaAsBi crystals.•Surface effects are removed from XPS signal by an epitaxial AlAs cap film.•Local variation of Bi composition is found.•The result is consistent with photoluminescence and theoretical results.•Ga vacancies and Bi crystallites are suggested to be dominating defects.

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关键词

GaAsBi,Photoelectron spectroscopy,Synchrotron radiation,Photoluminescence

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