High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes

IEEE Electron Device Letters, pp. 248-251, 2017.

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Keywords:
Gallium nitrideSubstratesSchottky diodesSiliconP-i-n diodesMore(2+)

Abstract:

This letter demonstrates quasi- and fully vertical GaN-on-Si pn diodes with record performance. The optimized device structure employs a highly conductive (ND >1020 cm-3) current collecting layer and a lightly carbon-doped drift layer. With this optimization, a differential specific on-resistance (RON) of 0.8-1 mΩ·cm2, a breakdown voltage...More

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