High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes

This letter demonstrates quasi- and fully vertical GaN-on-Si pn diodes with record performance. The optimized device structure employs a highly conductive (ND >1020 cm-3) current collecting layer and a lightly carbon-doped drift layer. With this optimization, a differential specific on-resistance (RON) of 0.8-1 mΩ·cm2, a breakdown voltage (BV) over 500 V, and a high forward current (~kA/cm2) were ...