Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN
Applied Physics Letters, pp. 2521012016.
Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 1019 cm−3 range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between NA-ND and the specific contact resisti...More
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