A 0.5-V 28-nm 256-kb Mini-Array Based 6T SRAM With Vtrip-Tracking Write-Assist.

This paper presents a 28-nm 256-kb 6T static random access memory operating down to near-threshold regime. The cell array is built on foundry 4-by-2 mini-array with split single-ended large signal sensing to enable an ultra-short local bit-line of 4-b length to improve variation tolerance and performance, and to reduce disturb while maintaining manufacturability. The design employs threshold power...