Ohmic contact mechanism for RF superimposed DC sputtered-ITO transparent p-electrodes with a variety of Sn2O3 content for GaN-based light-emitting diodes
Applied Surface Science(2018)
摘要
•The contact resistivity of sputtered-ITO on p-GaN was dependent to Sn2O3 content.•Sputtered-ITO contact with 7wt% Sn2O3 showed the lowest effective barrier height.•Sputtered-ITO contact with dual compositions of Sn2O3 (7/10 wt%) was suggested.
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关键词
Sputtered ITO,Light-emitting diode,Ohmic contacts,p-GaN
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