Subthreshold swing improvement in MoS transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO/HfO gate dielectric stack

Nanoscale, Volume 9, Issue 18, 2017, Pages 6122-6127.

Cited by: 17|Bibtex|Views0|DOI:https://doi.org/10.1039/c7nr00088j
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Other Links: pubmed.ncbi.nlm.nih.gov|academic.microsoft.com

Abstract:

Obtaining a subthreshold swing (SS) below the thermionic limit of 60 mV dec by exploiting the negative-capacitance (NC) effect in ferroelectric (FE) materials is a novel effective technique to allow the reduction of the supply voltage and power consumption in field effect transistors (FETs). At the same time, two-dimensional layered semic...More

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