Subthreshold swing improvement in MoS transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO/HfO gate dielectric stack

Obtaining a subthreshold swing (SS) below the thermionic limit of 60 mV dec by exploiting the negative-capacitance (NC) effect in ferroelectric (FE) materials is a novel effective technique to allow the reduction of the supply voltage and power consumption in field effect transistors (FETs). At the same time, two-dimensional layered semic...More