GaN Nanowire n-MOSFET With 5 nm Channel Length for Applications in Digital Electronics

Nadim Chowdhury,Giuseppe Iannaccone,Gianluca Fiori,Dimitri A. Antoniadis,Tomas Palacios

IEEE Electron Device Letters（2017）

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摘要

We study the performance of GaN nanowire n-MOSFETs (GaN-NW-nFETs) with a channel length, Lg = 5 nm based on fully ballistic quantum transport simulations. Our simulation results show high ION = 1137μA/μm and excellent on-off characteristics with Q = gm/SS = 188 μS-decade/μm-mV calculated for Ioff = 1 nA/μm and VGS = VDS = VCC = 0.5 V. These results represent: 1) ~ 15% higher Ion than Si-NW-nFET an...

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关键词

Gallium nitride,Silicon,Effective mass,Ions,Permittivity,Transistors,Performance evaluation

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