Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation

In this work we investigate design parameters enabling normally-off operation of zincblende (ZB-) phase Al X Ga(1−X)N/GaN high electron mobility transistors (HEMTs) via Synopsys Sentaurus Technology Computer Aided Design (TCAD). As ZB-phase III-nitrides are polarization-free, the 2D electron gas (2DEG) channel at the Al X Ga(1−X)N/GaN het...More