Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation

Ryan Grady
Ryan Grady

Journal of Physics D, pp. 2651042017.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.1088/1361-6463/aa74fc
Other Links: academic.microsoft.com

Abstract:

In this work we investigate design parameters enabling normally-off operation of zincblende (ZB-) phase Al X Ga(1−X)N/GaN high electron mobility transistors (HEMTs) via Synopsys Sentaurus Technology Computer Aided Design (TCAD). As ZB-phase III-nitrides are polarization-free, the 2D electron gas (2DEG) channel at the Al X Ga(1−X)N/GaN het...More

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