Device Instability of ReRAM and a Novel Reference Cell Design for Wide Temperature Range Operation
IEEE Electron Device Letters, pp. 1224-1227, 2017.
This letter addresses two difficult challenges for transition metal oxide resistive random access memories (ReRAMs)-sensitivity to operation temperature and random fluctuation of resistance value. A careful study of a WOx ReRAM array reveals that these devices are unstable and their read currents fluctuate with time due to random telegrap...More
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