Device Instability of ReRAM and a Novel Reference Cell Design for Wide Temperature Range Operation

IEEE Electron Device Letters, pp. 1224-1227, 2017.

Cited by: 0|Bibtex|Views21|DOI:https://doi.org/10.1109/LED.2017.2732025
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Abstract:

This letter addresses two difficult challenges for transition metal oxide resistive random access memories (ReRAMs)-sensitivity to operation temperature and random fluctuation of resistance value. A careful study of a WOx ReRAM array reveals that these devices are unstable and their read currents fluctuate with time due to random telegrap...More

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