Proton-Induced Displacement Damage and Total-Ionizing-Dose Effects on Silicon-Based MEMS Resonators
IEEE Transactions on Nuclear Science(2018)
摘要
The response of silicon-based microelectromechanical systems resonators to proton irradiation is determined by the combined effects of displacement damage and total ionizing dose (TID). Displacement damage (DD) can lead to carrier removal, which tends to decrease the carrier concentration, and TID leads to dopant activation and/or surface charging effects, which tend to increase the carrier concen...
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关键词
Radiation effects,Resonant frequency,Protons,Resonators,Silicon,Annealing,Micromechanical devices
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