MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality

Jori Lemettinen,Hironori Okumura,I. Kim,Christoffer Kauppinen,Tomas Palacios,Sami Suihkonen

Journal of Crystal Growth（2018）

引用 21|浏览20

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摘要

•MOVPE grown N-polar AlN layer without hexagonal hillocks or step bunching.•Optimum growth conditions were different for 1-deg-off and 4-deg-off substrates.•N-polar AlN exhibits hexagonal hillocks or step-flow growth.

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关键词

A1. Polarity,A1. X-ray diffraction,A3. Metal-organic vapor phase epitaxy,B1. Nitrides,B2. Semiconducting aluminum compounds

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