MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality

Jori Lemettinen
Jori Lemettinen
Christoffer Kauppinen
Christoffer Kauppinen

Journal of Crystal Growth, pp. 12-16, 2018.

Other Links: academic.microsoft.com|arxiv.org|www.sciencedirect.com

Abstract:

•MOVPE grown N-polar AlN layer without hexagonal hillocks or step bunching.•Optimum growth conditions were different for 1-deg-off and 4-deg-off substrates.•N-polar AlN exhibits hexagonal hillocks or step-flow growth.

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