Enhanced photoelectrochemical stability of GaN photoelectrodes by Al 2 O 3 surface passivation layer

Haseong Kim
Haseong Kim
Seung Wan Bang
Seung Wan Bang
Seyoung Kim
Seyoung Kim

Optics express, Volume 27, Issue 4, 2019.

Cited by: 0|Bibtex|Views2|DOI:https://doi.org/10.1364/OE.27.00A206
WOS
Other Links: pubmed.ncbi.nlm.nih.gov|academic.microsoft.com

Abstract:

Photoelectrochemical (PEC) water splitting is one of the most promising hydrogen production methods because of its high efficiency, renewable resources and harmless by-products. Gallium nitride (GaN) is suitable for PEC water splitting because it has excellent stability in electrolyte and band gap energy which straddles the redox potentia...More

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