Physical origin of the non-linearity in amorphous In-Ga-Zn-O thin-film transistor current-voltage characteristics

Bo-Wei Chen,Eric Kai Hsiang Yu,Ting-Chang Chang,Jerzy Kanicki

Solid-State Electronics（2018）

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摘要

•The a-IGZO bulk characteristics without contact resistance can be measured by adopting five terminal TFTs structure.•Conduction band tail states cause the non-linearity characteristics in drain current.•The relationship between gamma factor and conduction band tail states can be clarified by Silvaco TCAD simulation.

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关键词

Band tail states,Five terminal Thin Film Transistors,Electric characteristics nonlinearity

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