Influence of UDMHy on GaAs (0 0 1) surface reconstruction before and during growth of Ga(NAs) by MOVPE

O. Maßmeyer,E. Sterzer,L. Nattermann,W. Stolz,K. Volz

Applied Surface Science（2018）

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摘要

•In situ characterization of dilute nitrides during growth by MOVPE.•Dilute nitrides exhibit a more Ga or N rich (2 × 6)/(6 × 6) surface reconstruction.•UDMHy induces a rapid change of the surface reconstruction.•The surface reconstruction is crucial to incorporate nitrogen into GaAs.

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关键词

Characterization,Surface structure,Metalorganic vapor phase epitaxy,Nitrides,Semiconducting III–V materials,Reflectance anisotropy spectroscopy

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